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Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles
Journal article   Peer reviewed

Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles

Hendrik Faber, Martin Burkhardt, Abdesselam Jedaa, Daniel Kaelblein, Hagen Klauk and Marcus Halik
Advanced materials (Weinheim), Vol.21(30), pp.3099-3104
14/08/2009
DOI: https://doi.org/10.1002/adma.200900440

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
We report on thin-film transistors based on ZnO nanoparticles processed from solution and with a maximum temperature of 100 degrees C. Electron mobilities up to 2.5 cm(2)V(-1)s(-1) are obtained, and top-gate TFTs show non-volatile memory properties with a large, stable hysteresis and a memory ratio of 10(5). Memory TFTs operate in ambient, have good shelf-life (>6 months), and useful endurance properties.

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