Low-field current transport mechanisms in rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon junctions in the dark

Journal article

Peer reviewed

M. M ABDUL-GADER, U. A AL-BINNI, Ahmad A Ahmad, M. A AL-BASHA, N. J Ianno and Amany A. E. Ahmad

International journal of electronics, Vol.88(8), pp.873-901

01/08/2001

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Electronic transport in interface structures

Exact sciences and technology

Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Physics

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Title: Low-field current transport mechanisms in rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon junctions in the dark
Creators - without role: M. M ABDUL-GADER - University of Jordan
U. A AL-BINNI - University of Jordan
Ahmad A Ahmad - Jordan University of Science and Technology
M. A AL-BASHA - Saudi Aramco, Dhahran, Saudi Arabia
N. J Ianno - University of Nebraska–Lincoln
Amany A. E. Ahmad - King Saud University
Publication Details: International journal of electronics, Vol.88(8), pp.873-901
Publisher: Taylor & Francis
Identifiers: 9952861308331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article