Abstract
A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (Lambda V-t) vs. programming voltage is studied with and without the silicon nanoparticles. Applying -1 V for 5 s at the gate of the memory with nanoparticles results in a Lambda V-t of 3.4 V, and the memory window can be up to 8 V with an excellent retention characteristic (> 10 yr). Without nanoparticles, at -1 V programming voltage, the Lambda V-t is negligible. In order to get Lambda V-t of 3.4 V without nanoparticles, programming voltage in excess of 10 V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1 V the electric field across the 3.6 nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the Lambda V-t vs. electric field across the tunnel oxide shows square root dependence at low fields (E < 1 MV/cm) and a square dependence at higher fields (E > 2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields. (C) 2014 AIP Publishing LLC.