Abstract
A spin valve magnetoresistive random access memory with a flux-closed structure is presented. The flux-closed structure prevents the disruption to magnetization of the recording layer and increases the thermal stability. Simulation results show that the switching field increases under the uniform external field, however, the switching field has no change under the bit current field. Only the bit current that flows mostly at the center is used to switch the cell. Experimental results show that the bit current of 10 mA is sufficient to switch the 1 mum x 4 mum cell. (C) 2003 American Institute of Physics.