Abstract
In this research article, we carry out investigation on compensating the efficiency loss in thin-film CIGS photovoltaic (PV) cell due to absorber coat depth reduction. We demonstrate that the efficiency loss is mainly caused by the disruption of the charge-carrier transport. We propose an architecture engineered with a stepped band gap profile for improving the efficiency of charge-carrier transport and collection. By modifying the gallium content, we tuned the band gap profile of the active layer of a reference experimental cell from which we previously collected all parameters. Using the simulator environment SCAPS-1D, we modeled a three-steps stacking profile of active layer with different gallium contents from one layer to another. Based on the results obtained, the band gap configuration herein proposed appears to be a prospective strategy for high-performance ultrathin Cu(In,Ga)Se
-based PV cell architecture engineering. By combining this approach with the optimization of the active layer doping, we enhanced the yields of the reference structure from 18.93% for a 2 μm active layer to 23.36% for only 0.5 μm thickness of active layer, that is, an enhancement of 4.4%. The fill factor increased from 73.24 to 81.73%, that is, an additional stability indicator value of 8.5%. The good values of the obtained efficiency and the improvement of the fill factor value are relevant indicators of a stable device. Active layer stacking combined with a stepped band gap profile and doping level optimization is definitely providing new perspectives in thin-film CIGS high-performance PV cell achievement.