Abstract
The dynamic behavior of free conducting particles in SF6, insulated systems under switching impulse (SI) superimposed on a dc voltage is investigated. This study includes the influence of the most important design parameters on the particle motion, such as value of dc/switching voltage ratio, particle parameters, shape of switching voltage and system configuration; parallel plane and coaxial cylinders. The computations have concluded that the behavior of contaminating conducting particles in GIS when subjected to a dc bias voltage and SI wave is more dangerous than its behavior under pure switching impulse voltage.