Abstract
A theoretical novel model is investigated that describes the dynamic effects of the microelongation processes of an exciting semiconductor medium. The influence of the magnetic field for the optically excited medium is taken into consideration according to the photothermal transport characteristics. The governing equations were derived during the electronic (ED) and thermoelastic (TED) deformation processes when the microelongation parameters of the semiconductor medium were taken into account. The interference between thermal-magnetic-microelongat-plasma-mechanical waves is investigated. The dimensionless expressions are utilized to solve the main equations according to the harmonic wave technique in two-dimensional (2D) deformation. The complete solutions of the expressions of the physical field were obtained when some conditions were taken on the outer semiconductor surface. The theoretical microelongated semiconductor model in this investigation was checked by comparing it with some previous studies. The numerical simulation for the main physical field distributions is graphically displayed when the silicon (Si) material is used. The impact of various factors such as the magnetic field, thermal memory effect, and microelongation on the wave propagations for main fields was discussed.