Abstract
Dilute magnetic semiconductor films (GaMnN) are highly resistive, making transport measurements difficult to achieve. However, when GaMnN films are sandwiched between
p
-type doped
(
Al
Ga
N
∕
Ga
N
)
strained-layer superlattices, holes from the superlattice interact with the
Mn
3
+
∕
2
+
ions and transport measurements were realized. The authors have found also that the ferromagnetic properties of GaMnN critically depend on the level of
p
-type doping in the superlattice. They report anomalous Hall effect measurements in this
(
Al
Ga
N
∕
Ga
N
)
:
Mg
∕
(
Ga
Mn
N
)
multilayered structure. The current results also demonstrate the role of carriers, especially holes, in mediating the ferromagnetic properties of GaMnN dilute magnetic semiconductor films.