Abstract
The effect of antimony doping on the structural, magnetic, and electrical properties of transparent SrSn0.9Sb0.05Fe0.05O3 films synthesized by RF sputtering on oxidized Si and quartz substrates has been investigated. A reduction in electrical resistivity by two orders of magnitude compared to 5% Fe doped SrSnO3 film was observed. The electrical conductivity behavior has been analyzed using the Mott's Variable range hopping model. The nature of magnetic ordering were investigated by field cooled (FC) and zero field cooled (ZFC) magnetization measurements. The applicability of models based on oxygen vacancies to explain the magnetic ordering present in the sample has been discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556693]