Measurement of the activation energy of tantalum silicide growth on silicon by rapid electron beam annealing

Journal article

Peer reviewed

F Mahmood, H Ahmed, M Suleman and M. M Ahmed

Japanese journal of applied physics, Vol.30(8A), pp.L1418-L1421

01/08/1991

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of crystal growth; physics of crystal growth

Physics

Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

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Title: Measurement of the activation energy of tantalum silicide growth on silicon by rapid electron beam annealing
Creators - without role: F Mahmood - University of Cambridge
H Ahmed - University of Cambridge
M Suleman - University of the Punjab
M. M Ahmed - University of Cambridge
Publication Details: Japanese journal of applied physics, Vol.30(8A), pp.L1418-L1421
Publisher: Japanese journal of applied physics
Identifiers: 9945468208331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article