Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture

$Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture$

Journal article

Peer reviewed

T.-Y Zhang, L.-Q Chen and R FU

Acta materialia, Vol.47(14), pp.3869-3878

26/10/1999

Abstract

Applied sciences

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Mechanical and acoustical properties

Metals. Metallurgy

Physical properties of thin films, nonelectronic

Physics

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

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Title: Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture
Creators - without role: T.-Y Zhang - Hong Kong University of Science and Technology
L.-Q Chen - Hong Kong University of Science and Technology
R FU - Hong Kong University of Science and Technology
Publication Details: Acta materialia, Vol.47(14), pp.3869-3878
Publisher: Elsevier Science
Identifiers: 9945490108331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article