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Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric
Journal article   Peer reviewed

Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

M. T. Ghoneim, A. Kutbee, F. Ghodsi Nasseri, G. Bersuker and M. M. Hussain
Applied physics letters, Vol.104(23), p.234104
09/06/2014
DOI: https://doi.org/10.1063/1.4882647

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
We report the impact of mechanical anomaly on high-kappa/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times. (C) 2014 AIP Publishing LLC.

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