Memory effects in a nanoparticle system : Low-field magnetization and ac susceptibility measurements

Journal article

Peer reviewed

R. K Zheng, HONGWEI GU, BING XU and X. X Zhang

Physical review. B, Condensed matter and materials physics, Vol.72(1), pp.014416.1-014416.7

01/07/2005

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Exact sciences and technology

Magnetic properties and materials

Magnetic properties of nanostructures

Physics

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Title: Memory effects in a nanoparticle system : Low-field magnetization and ac susceptibility measurements
Creators - without role: R. K Zheng - Hong Kong University of Science and Technology
HONGWEI GU - Hong Kong University of Science and Technology
BING XU - Hong Kong University of Science and Technology
X. X Zhang - Hong Kong University of Science and Technology
Publication Details: Physical review. B, Condensed matter and materials physics, Vol.72(1), pp.014416.1-014416.7
Publisher: American Physical Society
Identifiers: 9943638908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article