Memory performance and retention of an All-organic ferroelectric-like memory transistor

Journal article

Peer reviewed

Raoul Schroeder, Leszek A Majewski, Monika Voigt and Martin Grell

IEEE electron device letters, Vol.26(2), pp.69-71

01/02/2005

Abstract

Applied sciences

Design. Technologies. Operation analysis. Testing

Electronics

Exact sciences and technology

Integrated circuits

Integrated circuits by function (including memories and processors)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: Memory performance and retention of an All-organic ferroelectric-like memory transistor
Creators - without role: Raoul Schroeder - University of Sheffield
Leszek A Majewski - University of Sheffield
Monika Voigt - University of Sheffield
Martin Grell - University of Sheffield
Publication Details: IEEE electron device letters, Vol.26(2), pp.69-71
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9949306208331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article