Abstract
InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102%. The improvements in short-circuit current density (J(sc), from 0.43 to 0.54 mA/cm(2)) and fill factor (from 44% to 72%) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4734380]