Abstract
We study heat transfer process in a 10 nm Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based on Silicon on Insulator (SOI) and Double Gate (DG). In this numerical investigation, we used the Cattaneo-Vernotte (CV) model coupled with a new boundary condition, usually termed as second order temperature jump. We solved the problem in a two-dimensional configuration using the finite element method. By taking into account the lag effect, our new model avoids the infinite heat propagation speed adopted by the Fourier's law. The heat generation is assumed to be uniform in the active zone. It was found that the CV model coupled with the second order temperature jump is able to predict the heat transfer obtained from Boltzmann Transport equation (BTE) and Ballistic Diffusive equation (BDE). In addition, the DG-MOSFET is revealed to be more thermally efficient compared with classical and SOI-MOSFETs.
•Our new model is an analysis of the heat transfer process in a 10 nm MOSFET transistor.•Thermal properties of transistor device have been investigated for different heterostructure.•We found that our new model is able to predict the heat transfer obtained from Boltzmann Transport equation.•We found that the DGMOSFET is revealed more thermally efficient compared with classical and SOIMOSFET.