Abstract
Ge25Se75 binary glass is prepared using melt-quenching technique. Thin films of 250 nm Ge25Se75 are thus evaporated using thermal evaporation method on a cleaned glass substrate. Energy dispersive X-ray analysis confirmed the starting percentage of the element. The effect of microwave irradiation on Ge25Se75 thin film with different illumination times (0-90 min) is studied. As confirmed by X-ray diffraction and scanning electron microscopy measurements, the nature of the as-prepared Ge25Se75 thin films appears to be amorphous. The type of optical transition has been demonstrated to be allowed indirect transitions. Moreover, the rest of the optical parameters have changed as a result of the microwave irradiation. It can be observed that, for Ge25Se75 thin films, the optical band gap increases as the illumination time increases. In terms of bond adjustments and changes in these films' microstructure, this post-light increment in the band gap was decoded. Furthermore, while increasing the illumination