Abstract
A miniature SAW device is designed and fabricated at 1
GHz for wireless communication system. A 5
μm thin film of ZnO is successfully deposited using RF sputtering technique on plasma-enhanced chemical deposition (PECVD) SiO
2 layer of 1
μm on top of Si wafer under various operating conditions. The
c-axis-oriented ZnO film exhibit a sharp diffraction peak corresponding to the (0
0
2) reflection at 2
θ=34.42. The fabrication process utilizing the micro-electro-mechanical systems (MEMS) technology of the SAW device is described. Simulation of the RF-SAW filter is performed. Measurements and experimental work are presented for the RF-SAW device.