Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors (vol 47, 119201, 2009)

Journal article

Peer reviewed

Ji-Woon Yang, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi and Raj Jammy

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.50(11)

01/11/2011

Abstract

Physical Sciences

Physics

Physics, Applied

Science & Technology

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Title: Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors (vol 47, 119201, 2009)
Creators - without role: Ji-Woon Yang - Korea University
Chang Seo Park - Sematech
Casey E. Smith - Sematech
Hemant Adhikari - Sematech
Jeff Huang - Sematech
Dawei Heh - Sematech
Prashant Majhi - Sematech
Raj Jammy - Sematech
Publication Details: JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.50(11)
Publisher: Iop Publishing Ltd
Number of pages: 1
Identifiers: 9945746208331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article