Abstract
Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p-i-n polarity are reported. The dark current density (J-V) characteristics, the temperature dependence of zero-bias resistance area product (R(0)A), the dynamic resistance as well as bias dependent dynamic resistance (R-d) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55 mu m wavelength required for photodetection in optical communication. Quantum efficiency of similar to 95%, responsivity similar to 0.6 A/W and D-star similar to 5.7 x 10(10) cm Hz(1/2)/W have been achieved at 300 K in X BeTe conduction band minimum. (C) 2014 Elsevier B.V. All rights reserved,