Abstract
In this paper, we theoretically study the effects of the widths of the central quantum well GaN and the right barrier AlGaN on the spin-polarized currents in resonant tunneling diode based on GaMnN contacts and AlGaN/GaN two barriers. We found that the two spin currents (up and down) can be modulated at low temperature by varying the quantum sizes. Our findings show marked dependence of the spin-current maxima on the quantum well (
L
w
) width. We report an optimum value of
L
w
for which the spin-up current reaches its maximum before the spin-down current. Also, we have studied the effect of the right barrier width (
L
b2
) on the spin currents. We have found that the obtained currents are dramatically reduced by increasing the width of the right barrier at some
L
b2
widths (
L
b2
=), so that the two spin currents disappear completely. The obtained results can be useful for the experimenters to create efficient spin filters to sustain and modulate the output spin currents.