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Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells
Journal article   Peer reviewed

Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells

Bilel Chouchen, Asmae El Aouami, Mohamed Hichem Gazzah, Abdullah Bajahzar, El Mustapha Feddi, Francis Dujardin and Hafedh Belmabrouk
Optik (Stuttgart), Vol.199, p.163385
12/2019
DOI: https://doi.org/10.1016/j.ijleo.2019.163385

Abstract

InGaN/GaN Photovoltaic parameters Polarization effects Solar cell Temperature
Taking into consideration the effects of electronic properties (and their behavior under temperature), we present a new numerical model for the determination of the characteristic parameters of the InGaN/GaN multiple quantum well solar cells. Our approach shows that it is possible to enhance the performance of the InGaN/GaN MQW by tuning the electronic properties and by introducing the impact of the polarization of heterostructures with N-face and for an optimal indium composition.

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