Abstract
We propose a new and simple modeling approach for strain impact on the transmission and reflection rate of semiconductor devices. The model is applied to graphene or carbon nanotubes deposited on substrates. Any change in transmission rate by strain can directly impact on the short-circuit current density of an electronic device. The nanolayers of graphene and nanotubes are often used as the excellent replacement for the conventional metallic contacts. However, these nanolayers are sensitive to in-plain and out-plain strain. It is shown that the transmission rate is significantly reduced by the strain. We have also calculated the change in the refractive index under in-plain strain and the consequent change in reflection rate. The modeling can be extended to calculate the change in the refractive index under out-plain strain. Furthermore, one can calculate the change in short-circuit current density of the full device (i.e. solar cell) under in-plain or out-plain strains. A practical outcome of our modeling approach is to optimize the thickness or concentration of graphene and carbon nanotube to en extent which is less sensitive to any thermo-mechanical strain. This leads the reader to strain tuning techniques which are rarely applied to sensors, solar cells or photodetector devices through fabrication and characterization process.