Abstract
In the attempt to realize quantum devices based on a resonant tunneling effect through Si/SiO2 and emitting a red light at a key 0.644 mu m wavelength, we have modeled SiO2/Si/SiO2 double barriers embedded between two n-doped Si layers. To study the quantum confinement in Si QW and obtain the potential shape, we have solved a set of coupled Schrodinger-Poisson equations self-consistently. The effects of Si well thickness on quantum confinement of electrons and heavy-holes levels are presented. The fundamental energy transition and oscillator strength are also examined as a function of well width. A blue shift of the emission energy is observed, when the thickness of the Si well is reduced. The desired red light at a key 0.644 mu m wavelength is obtained with an acceptable recombination efficiency given by transition oscillator strength. The effect of an applied electric field has been investigated for this red emission. (c) 2005 Elsevier B.V. All rights reserved.