Abstract
Optical propagation in an anisotropic rectangular semiconductor waveguide is established, using a plane-wave approximation. The discrete modes of this guide are hybrid. On the basis of this model, simulation (λ=l·27μm) shows that a π phase difference is introduced between the two fundamental modes in the rib p+(InP)-n-(GaInAsP)-n+(InP) structure at - 14·6 V, for a device length of 2·5 mm. Electro-optic switching in the adjacent MOS waveguide pair is obtained for the bias 0 and - 20 V. The proposed device geometry is compatible with the liquid-phase epitaxial-growth techniques of the GalnAsP alloy system