Molecular beam epitaxial growth of GaAs1-XNX with dispersive nitrogen source

Journal article

Peer reviewed

S. Z Wang, S. F Yoon, T. K NG, W. K Loke and W. J Fan

Journal of crystal growth, Vol.242(1-2), pp.87-94

01/07/2002

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Iii-v semiconductors

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Molecular, atomic, ion, and chemical beam epitaxy

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Photoluminescence

Physics

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Title: Molecular beam epitaxial growth of GaAs1-XNX with dispersive nitrogen source
Creators - without role: S. Z Wang - Nanyang Technological University
S. F Yoon - Nanyang Technological University
T. K NG - Nanyang Technological University
W. K Loke - Nanyang Technological University
W. J Fan - Nanyang Technological University
Publication Details: Journal of crystal growth, Vol.242(1-2), pp.87-94
Publisher: Elsevier
Identifiers: 9944387908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article