Abstract
The first demonstration of a monolithic integrated extended-cavity laser in an InAs/InAlGaAs quantum-dash-in-well structure on an InP substrate is reported. The integration is achieved using nitrogen implantation-induced quantum-dash intermixing. A differential blue shift of 128 nm has been obtained between the active and intermixed passive sections. A propagation loss of 9.2 cm(-1) within the intermixed passive waveguide section has been measured by comparing laser threshold currents of all active and integrated extended passive cavity devices.