Morphology and origin of V-defects in semipolar (11–22) InGaN

Journal article

Peer reviewed

A. Lotsari, A. Das, Th Kehagias, Y. Kotsar, E. Monroy, Th Karakostas, P. Gladkov, Ph Komninou and G.P. Dimitrakopulos

Journal of crystal growth, Vol.339(1), pp.1-7

15/01/2012

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Title: Morphology and origin of V-defects in semipolar (11–22) InGaN
Creators - without role: A. Lotsari - Aristotle University of Thessaloniki
A. Das - CEA Grenoble
Th Kehagias - Aristotle University of Thessaloniki
Y. Kotsar - CEA Grenoble
E. Monroy - CEA Grenoble
Th Karakostas - Aristotle University of Thessaloniki
P. Gladkov - Czech Academy of Sciences, Institute of Photonics and Electronics
Ph Komninou - Aristotle University of Thessaloniki
G.P. Dimitrakopulos - Aristotle University of Thessaloniki
Publication Details: Journal of crystal growth, Vol.339(1), pp.1-7
Identifiers: 9925014408331
Academic Unit: Prince Mohammad Bin Fahd University
Language: English
Resource Type: Journal article