Abstract
Highly ordered In2Se3 nanostructures with different morphologies were first fabricated via a simple and efficient thermal evaporation process. Through manipulating the growth driving force, the morphology of the In2Se3 nanostructures was varied from nanowire arrays, via nanotree arrays to nanowire bundles. Furthermore, the nanostructures were on-demand doped with sulfur by co-evaporating the dopant In2S3 precursor and In2Se3 powder during the growth. Electrical and photoelectrical studies based on individual undoped and doped In2Se3 nanowires revealed that sulfur doping leads to significant improvements in the transport and photoelectronic performances, such as enhancing the conductivity and improving the sensitivity to visible light. These excellent performances demonstrate that S-doped In2Se3 nanowires should offer great potential for next-generation device applications.