N- and P-Channel Transport Behavior in Thin Film Transistors Based on Tricyanovinyl-Capped Oligothiophenes

Xiuyu Cai; Michael W. Burand; Christopher R. Newman; Demetrio A. da Silva Filho; Ted M. Pappenfus; Mamoun M. Bader; Jean-Luc Brédas; Kent R. Mann; C. Daniel Frisbie

doi:10.1021/jp061168v

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N- and P-Channel Transport Behavior in Thin Film Transistors Based on Tricyanovinyl-Capped Oligothiophenes

Journal article

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N- and P-Channel Transport Behavior in Thin Film Transistors Based on Tricyanovinyl-Capped Oligothiophenes

Xiuyu Cai, Michael W. Burand, Christopher R. Newman, Demetrio A. da Silva Filho, Ted M. Pappenfus, Mamoun M. Bader, Jean-Luc Brédas, Kent R. Mann and C. Daniel Frisbie

The journal of physical chemistry. B, Vol.110(30), pp.14590-14597

03/08/2006

DOI: https://doi.org/10.1021/jp061168v

PMID: 16869559

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Title: N- and P-Channel Transport Behavior in Thin Film Transistors Based on Tricyanovinyl-Capped Oligothiophenes
Creators - without role: Xiuyu Cai - Georgia Institute of Technology
Michael W. Burand - Georgia Institute of Technology
Christopher R. Newman - University of Minnesota Morris
Demetrio A. da Silva Filho - Georgia Institute of Technology
Ted M. Pappenfus - Georgia Institute of Technology
Mamoun M. Bader - Georgia Institute of Technology
Jean-Luc Brédas - Georgia Institute of Technology
Kent R. Mann - Georgia Institute of Technology
C. Daniel Frisbie - Georgia Institute of Technology
Publication Details: The journal of physical chemistry. B, Vol.110(30), pp.14590-14597
Identifiers: 9913520508331
Academic Unit: Alfaisal University
Language: English
Resource Type: Journal article