Abstract
Indium polytelluride crystals were used in the present work. Samples were prepared by a special modified Bridgman technique with high quality. The observation of switching and memory phenomenon in this compound and the present study is the first for In2Te5. In this investigation we study Ag - In2Te5 - Ag structure in sandwich form. The current - voltage characteristics (CVC) of this compound exhibit two distinct regions high resistance OFF state and low resistance ON state having negative differential resistance (NDR) with S type characteristics. The experimental results indicate that the phenomenon in our sample is very sensitive to temperature, light illumination and sample thickness. The switching parameters were cheeked under the influence of different factors of the ambient conditions. Possible explanations are mentioned.