Nano‐Memristors with 4 mV Switching Voltage Based on Surface‐Modified Copper Nanoparticles

Journal article

Peer reviewed

Peisong Liu, Fei Hui, Fernando Aguirre, Fernan Saiz, Lulu Tian, Tingting Han, Zhijun Zhang, Enrique Miranda and Mario Lanza

Advanced materials (Weinheim), Vol.34(20), pp.2201197-n/a

01/05/2022

PMID: 35320590

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Title: Nano‐Memristors with 4 mV Switching Voltage Based on Surface‐Modified Copper Nanoparticles
Creators - without role: Peisong Liu - Soochow University
Fei Hui - Zhengzhou University
Fernando Aguirre - King Abdullah University of Science and Technology
Fernan Saiz - King Abdullah University of Science and Technology
Lulu Tian - Henan University
Tingting Han - Soochow University
Zhijun Zhang - Henan University
Enrique Miranda - Universitat Autònoma de Barcelona
Mario Lanza - King Abdullah University of Science and Technology
Publication Details: Advanced materials (Weinheim), Vol.34(20), pp.2201197-n/a
Identifiers: 9944677808331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article