Abstract
Black phosphorus (BP) has arisen as the preferred material with great applications in electronics devices. Nanoinvestigation of the thermal properties and thermal stability of BP transistors at the nanoscale is extremely challenging. This paper reports nanothermal investigation of BP MOSFET transistors, using the dual-phase-lagging (DPL) model including the phonon scattering. The thermal properties of the BP including the thermal conductivity and volumetric heat generation rate considered depend on the temperature. The results are compared with those obtained from the classical silicon MOSFET. Using the finite-element method, we have demonstrated that the temperature variation of the BP MOSFET does not exceed 305 K instead of 319 K in the case of a classical MOSFET. This paper not only exposes various novel properties of BP transistors, but also demonstrates the great usefulness of the BP transistors.