Abstract
Inverted bulk heterojunction (BHJ) solar cells have received much interest due to their stability and lifetime. The inverted bulk heterojunction solar cells are fabricated based on poly(3-hexylthiophene (P3HT)) and Phenyl-C61-butyric acid methyl ester (PCBM). Proper engineering of nanostructures can enhance the adsorption of the sunlight in solar cells. Here, we used nanoimprint lithography technique to form nanoimprinted ZnO (NI-ZnO) or ZnO quantum dots-embedded SiO2 nanoparticles (NI-SiO2@ZnO) layers on ITO substrates. The nanoimprinted layer not only provides ideal scattering characteristics for optimum light trapping, but also acts as electron transport layer. Compared to the power conversion efficiency (PCE) of 1.83% with plain ZnO layer, the devices with NI-ZnO and NI-SiO2@ZnO layers resulted in higher PCEs of 2.35% and 2.94%, respectively.