Abstract
Understanding the physics of spintronic devices in the 3-nm size range can pave the way to next-generation energy-efficient information processing devices. To build a spin computer, a layer of 3-nm CoFe2O4 nanoparticles was sandwiched as a central layer into the standard spin-transfer torque magnetic tunneling junction (STT-MTJ) stack. With further focused ion beam (FIB) trimming, a dual-layer junction consisting of one ormore nanoparticles separating two CoFeB ferromagnetic layers was turned into a two-terminal spintronic device. The measured room-temperature electron transport through the device showed a staircase effect reminiscent of a single electron transport, which in addition depended on the relative orientations of the magnetic states of the ferromagnetic layers and the high-anisotropy ferrimagnetic nanoparticle. Besides having the staircase steps, the V-I curve indicated switching of the nanoparticles magnetization through the STT effect at currents of above 0.05 uA. The magnetoresistance (MR) curve of this device with themagnetic field applied perpendicular to the junction had an anomalous oscillatory field dependence in a relatively low field range of below 100 Oe.