Abstract
In this work, we demonstrate selective electroless deposition of Cu into nanoscratches produced on n-type Si(1
1
1) surfaces covered with an organic monolayer. The organic layer (undecylenic acid) was covalently attached to a hydrogen-terminated Si surface. The nanosize scratches were produced with an atomic force microscope (AFM) in contact mode using a diamond-coated tip. Copper was deposited in the scratched regions with an electroless (immersion plating) approach using a 0.05 M CuSO
4
+
1% HF electrolyte. The results show clearly that the organic layer can be used as a mask for the deposition of Cu. Optimization of the electrochemical parameters, leads to a very high selectivity and uniform and well-defined nanostructures. This process represents a novel approach for a direct patterning of Si surfaces using an immersion plating reaction.