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Nanostructurale nature of the porous GaAs layer formed on p +-GaAs substrate by electrochemical anodization
Journal article   Peer reviewed

Nanostructurale nature of the porous GaAs layer formed on p +-GaAs substrate by electrochemical anodization

L. Beji, A. Missaoui, A. Fouzri, H. Ben Ouada, H. Maaref and A. Bouazizi
Microelectronics Journal, Vol.37(8), pp.783-785
01/08/2006
DOI: https://doi.org/10.1016/j.mejo.2005.10.003

Abstract

Anodization Porous GaAs Quantum confinement
A porous GaAs layer has been formed by electrochemical anodization in HF based solution on extremely doped p-type GaAs substrate. Porous nature of the elaborated sample has been evidenced by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Nanostructurale nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by photoluminescence spectroscopy (PL).

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