Abstract
Thin films of Au/Ch-diisoQ/p-Si/Au were prepared by vacuum thermal evaporating technique. The structure and morphology of Ch-diisoQ on the p-Si substrate were studied by the analysis of X-ray diffract pattern and atomic force microscopy. The dark current density-voltage characteristics were investigated at various temperatures ranging from 298 to 393 K. A thermionic emission mechanism dominates the current at low voltage. At high forward bias voltage, the space charge limited current controlled by exponential trap distribution was the dominant mechanism. The dependence of the reverse current density on various temperatures was expounded via Poole-Frenkel and Schottky effects. Depend on the capacitance-voltage characteristic, the carrier concentration values and the built-in voltage were evaluated at different temperatures. The photocurrent characteristics of Ch-diisoQ/p-Si heterojunctions under the illumination of 100 W/cm2 were discussed. The values of the short circuit current (Jsc), the open-circuit voltage (Voc), the fill factor (FF), and power conversion efficiency (η%) of Ch-diisoQ/p-Si heterojunctions were comparing with other related organic/inorganic heterojunctions.