Abstract
Safranin-T/p-Si heterostructure (HS) as a hybrid organic/inorganic HS was fabricated. Thermal evaporation was used to deposit Safranin-T films. The X-ray diffraction spectrum of Safranin-T shows a single peak around a diffraction angle of 31.70, which can be ascribed to the growth along the (3 2 4) plane. The crystallite size of the Safranin-T films is estimated as 31 nm. The electrical and photoelectrical features of the Safranin-T/p-Si HS are examined regarding the current-voltage measurements. The ideality factor was calculated as 2.09 and decreased with increased temperature, while the height of the barrier is increased from 0.76 to 1.01 eV. This conduct has been clarified due to the inhomogeneities of the barrier at the Safranin-T/p-Si interface. Under the light, the Safranin-T/p-Si HS demonstrates photoelectrical behavior. The photovoltaic parameters (the open-circuit voltage, short circuit current, and conversion efficiency) are evaluated as 0.39 V, 0.544 mA, and 2.76%, separately.