Abstract
Polymeric negative differential resistive (NDR) switching was explored based on the sandwiched structure of indium titanium oxide (ITO) coated polyethyleneterepthalate(PET)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/silver(Ag) through electrohydrodynamic atomization (EHDA) printing technique. The NDR switching in the fabricated device with the structure of ITO/PEDOT:PSS/Ag was analyzed through semiconductor device analyzer under polarity dependent bipolar sweeping voltage of less than . Effect of the current compliance (CC) in the NDR switching of the fabricated switch has been demonstrated. Multiple resistive switching sweeps were taken to scrutinize the robustness of the fabricated device over 100 cycles. The non-volatility of the as-fabricated device was checked against different time stresses over 2500 s. The switching mechanism is proposed to be due to the transition between PEDOT+ and PEDOT0 chains. The current conduction mechanism involved in the PEDOT:PSS based NDR switches is attributed to the ohmic conduction at lower voltages, while space charge limited conduction and NDR effects were prominent due to the injection of carriers at higher voltages.