Neural network based time domain modelling of 0.18 μm MOSFETs

Journal article

Peer reviewed

B. Toner, M. S. Alam, V. F. Fusco and G. A. Armstrong

Microwave and optical technology letters, Vol.35(3), pp.203-206

05/11/2002

Abstract

MOSFET

neural network

time-domain device modeling

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Title: Neural network based time domain modelling of 0.18 μm MOSFETs
Creators - without role: B. Toner - Queens University
M. S. Alam - Queens University
V. F. Fusco - Queens University
G. A. Armstrong - Queens University
Publication Details: Microwave and optical technology letters, Vol.35(3), pp.203-206
Publisher: Wiley Subscription Services, Inc., A Wiley Company
Number of pages: 4
Identifiers: 9916437708331
Academic Unit: Imam Mohammad Ibn Saud Islamic University (IMSIU)
Language: English
Resource Type: Journal article