Abstract
High spatial band-gap tuning has been observed from an
In
Ga
As
∕
Ga
As
quantum-dot (QD) structure implanted with electrically neutral species, As and P ions, at
200
°
C
followed by a rapid thermal annealing. Phosphorous was found to be a more effective species to induce QD intermixing than the As at similar dose level. A blueshift as large as
126
meV
has been observed from the
P
+
-implanted and intermixed sample, while only
∼
14
meV
has been measured from the
Si
x
N
y
-capped sample.