New accurate approximation of the Einstein Relation for heavily-doped semiconductor devices

Journal article

Peer reviewed

Ahmed AlQurashi and C.R. Selvakumar

Solid-state electronics, Vol.172, p.107869

10/2020

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Title: New accurate approximation of the Einstein Relation for heavily-doped semiconductor devices
Creators - without role: Ahmed AlQurashi - Umm al-Qura University
C.R. Selvakumar - University of Waterloo
Publication Details: Solid-state electronics, Vol.172, p.107869
Identifiers: 9931666808331
Academic Unit: Umm Al Qura University
Language: English
Resource Type: Journal article