Abstract
A successful trial has been achieved to prepare a stable quaternary composition Cu2CdSn3S8 (CCTS8). Thin films of the new quaternary CCTS8 have been deposited using spray pyrolysis technique. The crystal structure, morphology, optical and optoelectrical properties have been investigated to understand the films nature. The prepared films reveal n-type semiconducting behaviour. They show optical direct transitions with optical energy gaps in the range (3.79–4.08 eV). The surprising results obtained for the studied films suggests the possibility of utilizing our films as window layers in thin film solar cells or as suitable candidates for various display devices.
•Cu2CdSn3S8 (CCTS8) composition has been prepared in a stable phase.•CCTS8 films have been deposited using spray pyrolysis technique.•Crystal structure, morphology, optical and optoelectrical properties have been investigated to understand the films nature.•Films reveal n-type semiconducting behaviour with optical energy gaps in the range (3.79–4.08 eV).•Films can be utilized as window layers in thin film solar cells or as suitable candidates for various display devices.