Abstract
Nickel doped In2S3 films have been prepared by the chemical spray pyrolysis technique at 350 degrees C on glass substrates. The Ni doping level was changed by varying Ni:In molar ratio from 0 to 4% in solution. The structural studies reveal that the Ni-doped In2S3 films are polycrystalline and exhibit a cubic structure. As the Ni:In molar ratio increases, the crystallite size decreases from 27.5 to 23 nm and RMS roughness values increase from 12 to 18 nm, respectively. The presence of Ni in the deposited films was confirmed by energy dispersive spectroscopy. Raman studies show different peaks related to In2S3 phase and do not reveal any secondary phases of In-Ni and Ni-S. The transmission coefficient is about 70-55% in the visible region and 85-75% in near-infrared region. The band gap energy increases from 2.66 to 2.82 eV for direct transitions with the increase of Ni:In ratio from 0 to 4%. The refractive index values of In2S3:Ni thin films decrease from 2.46 to 2.40 and the extinction coefficient values are in the range 0.01-0.20.