Abstract
A low energy (1.45kJ) Mather type plasma focus device is used for nitrogen ion implantation in mono-crystalline silicon. The silicon specimens are exposed to different number of focus shots by placing the targets in front of the anode at a fixed distance. Raman spectroscopy and X-ray diffraction are employed to characterize the implanted specimens. The results indicate that mono-crystalline silicon transforms into amorphous structure through micro-crystalline phase on increasing the implantation dose. Further irradiation of the specimens results in the formation of amorphous Si3N4 layers. High temperature annealing in argon ambient transforms the amorphous Si3N4 into β-Si3N4.