Abstract
An investigation of photoconductivity in bulk glass of Ge-20 (Te-35 Se-65)(80) prepared by a melt-quenching method is described. The measurements were carried out at room temperature and at different levels of illumination. The I-V data have been detected to be straight lines for all intensities, which specify ohmic conduction. Intensity (F) dependence of the photocurrent demonstrates nearby power law dependence of the photocurrent on incident radiation. The photosensitivity was found to increase with increasing light intensity. Both the life time and the differential life time decrease with increasing the intensity of the light. The differential life time and the life time are represented by nonlinear fitting by the exponential function. This behavior can be well interpreted in terms of the photo-induced effect. New localized states (recombination of localized electrons and holes) are induced in the band gap due to prolonged strong photo illumination. Thermal measurement reveals that the present glass is a good glass former.