Abstract
The structure of carbon nanotube CNTs functioning as p-type material deposited over n-type silicon to produce heterojunction of Au/CNTs/n-Si/Al is presented in this study. This work explored the capacitance and conductance at various frequencies, temperatures, and voltages, the novelty here is that negative capacitance and conductance were observed at high frequencies in all temperatures and voltages, whereas capacitance appeared at both high and low frequencies, such as (2 x 10(7),1x 10(7),1 x 10(2),10) Hz. At high-frequency f = 2 x 10(7) Hz, the capacitance raises while the conductance decreases; at all temperatures and voltages, the capacitance and conductance exhibit the same behavior at particular frequencies such as 1 x 10(6),1 x 10(5),1 x 10(4),1 x 10(3) Hz, however their behavior differs at 2 x 10(7),1 x 10(7), 1 x 10(2) and 10 Hz. Investigating the reverse square capacitance with voltage yielded the energy Fermi (E-f), density surface of states (N-ss), depletion width (W-d), barrier height, series resistance, and donor concentration (N-d).