Abstract
Antimony trisulfide (Sb
2
Se
3
), a non-toxic and accessible substance, has possibilities as a material for use in solar cells. The current study numerically analyses Sb
2
Se
3
solar cells through the program Solar Cell Capacitance Simulator (SCAPS). A detailed simulation and analysis of the influence of the Sb
2
Se
3
layer’s thickness, defect density, band gap, energy level, and carrier concentration on the devices’ performance are carried out. The results indicate that a good device performance is guaranteed with the following values in the Sb
2
Se
3
layer: an 800 optimal thickness for the Sb
2
Se
3
absorber; less than 10
15
cm
−3
for the absorber defect density; a 1.2 eV optimum band gap; a 0.1 eV energy level (above the valence band); and a 10
14
cm
−3
carrier concentration. The highest efficiency of 30% can be attained following optimization of diverse parameters. The simulation outcomes offer beneficial insights and directions for designing and engineering Sb
2
Se
3
solar cells.