Abstract
Photovoltaic research activities are related to material innovation that can be obtained at a comparatively low cost. Semiconductor p-type multi-crystalline Czochralskyc (CZ)-grown silicon wafers were used in this study. The effects of front surface recombination velocities and base thickness in solar cells' quantum efficiency are theoretically calculated. The results denote that both the surface recombination velocities and the base widths significantly impact the quantum efficiency. The results are of universal technical importance in designing solar cells and their surface structures. The main goal of this paper was to confirm the validity of the above theoretical calculations; for this purpose, silicon solar cells with front-thin porous silicon and rear interdigitated contact have been produced. A good agreement was obtained between experimentally obtained solar cells' quantum efficiency data and the theoretical results. Therefore, the quantum efficiency of the mc-Si solar cells with porous silicon and rear interdigitated contact was enhanced up to 25% at 580-1100 nm wavelength range and up to 50% at short wavelength (400-570 nm), compared to reference mc-Si solar cells. The obtained results indicate that the rear interdigitated contact maximizes the surface area of the metal contact and improves the current collection. At the same time, the porous silicon layer passivates the front surface and reduces recombination losses.